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ON Semiconductort Amplifier Transistors PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC327 -45 -50 -5.0 -800 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C BC327, BC327-16, BC327-25, BC327-40 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 2 BASE 3 EMITTER COLLECTOR 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA, IB = 0) Collector-Emitter Breakdown Voltage (IC = -100 A, IE = 0) Emitter-Base Breakdown Voltage (IE = -10 mA, IC = 0) Collector Cutoff Current (VCB = -30 V, IE = 0) Collector Cutoff Current (VCE = -45 V, VBE = 0) Emitter Cutoff Current (VEB = -4.0 V, IC = 0) V(BR)CEO -45 V(BR)CES -50 V(BR)EBO ICBO - ICES - IEBO - - - -100 -100 nAdc - -100 nAdc -5.0 - - - - Vdc nAdc - - Vdc Vdc (c) Semiconductor Components Industries, LLC, 2001 1 May, 2001 - Rev. 2 Publication Order Number: BC327/D BC327, BC327-16, BC327-25, BC327-40 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC327 BC327-16 BC327-25 BC327-40 VBE(on) VCE(sat) 100 100 160 250 40 - - - - - - - - - 630 250 400 630 - -1.2 -0.7 Vdc Vdc - (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) Cob fT - - 11 260 - - pF MHz r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001 0.002 0.005 0.01 10 20 50 100 Figure 1. Thermal Response http://onsemi.com 2 BC327, BC327-16, BC327-25, BC327-40 -1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135C hFE, DC CURRENT GAIN 100 s dc TC = 25C dc TA = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) -3.0 -10 -30 VCE, COLLECTOR-EMITTER VOLTAGE 1000 VCE = -1.0 V TA = 25C -100 100 -10 -1.0 -100 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 2. Active Region - Safe Operating Area Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 -0.6 -0.4 IC = -300 mA -0.2 0 -0.01 IC = -10 mA -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 IC = -100 mA IC = -500 mA V, VOLTAGE (VOLTS) -1.0 TA = 25C -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -1.0 V Figure 4. Saturation Region Figure 5. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) +1.0 VC for VCE(sat) 100 0 C, CAPACITANCE (pF) Cib 10 Cob -1.0 VB for VBE -2.0 -1.0 -10 -100 IC, COLLECTOR CURRENT -1000 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -100 Figure 6. Temperature Coefficients Figure 7. Capacitances http://onsemi.com 3 BC327, BC327-16, BC327-25, BC327-40 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER DIM A B C D G H J K L N P R V ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 BC327/D |
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